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ST2SC1815

NPN Silicon Epitaxial Planar Transistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. Thetransistorissubdividedintofourgroups, O,Y,GandL,accordingtoitsDCcurrent gain.AscomplementarytypethePNP transistorST2SA1015isrecommended. Onspecialrequest,thesetransistorscanb

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司

2SC1815

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

2SC1815

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Powerdissipation

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

2SC1815

NPNEpitaxialPlanarTansistor

NPNEpitaxialPlanarTansistor

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

2SC1815

iscSiliconNPNTransistor

DESCRIPTION ?HighVoltageandHighCurrent Vceo=50V(Min.),Ic=150mA(Max) ?ExcellenthFELinearity ?LowNoise ?ComplementtoType2SA1015(O,Y,GRclass) APPLICATIONS ?AudiofrequencygeneralpurposeamplifierApplications ?Driverstageamplifierapplications.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SC1815

TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess)

AudioFrequencyVoltageAmplifierApplications LowNoiseAmplifierApplications ?Highbreakdownvoltage,highcurrentcapability :VCEO=50V(min),IC=150mA(max) ?ExcellentlinearityofhFE :hFE(2)=100(typ.)atVCE=6V,IC=150mA :hFE(IC=0.1mA)/hFE(IC=2mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SC1815

AudioFrequencyGeneralPurposeAmplifierApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SC1815

SiliconEpitaxialPlanarTransistor

FEATURES ●Highvoltageandhighcurrent VCEO=50V(Min),IC=150mA(Max). ●ExcellenthFElinearity:hFE(2)=100(Typ)atVCE=6V,IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA=0.95(Typ)) ●Lownoise. ●Complementaryto2SA1015. APPLICATIONS ●Audiofrequencyg

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

2SC1815

iscSiliconNPNTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SC1815

SiliconEpitaxialPlanarTransistor

FEATURES ●Highvoltageandhighcurrent VCEO=50V(Min),IC=150mA(Max). ●ExcellenthFElinearity: hFE(2)=100(Typ)atVCE=6V,IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA=0.95(Typ)) ●Lownoise. ●Complementaryto2SA1015. APPLICATIONS ●Audiofrequencygeneralpurposeamplifierapplicati

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

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TO92
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SOT-23
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2022
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56650
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TO-92
10000
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更多ST2SC1815供應(yīng)商 更新時(shí)間2025-3-19 10:34:00