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AM6923P

DualP-Channel12-V(D-S)MOSFET

AnalogPower

Analog Power

ANX6923

ANX6923資料

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

PDF上傳者：深圳市賽爾通科技有限公司

AP6923GMT-HF

SimpleDriveRequirement,EasyforSynchronousBuckConverterApplication

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AP6923O

P-CHANNELWITHSCHOTTKYDIODEPOWERMOSFET

Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. ▼LowOn-Resistance ▼FastSwitchingCharacteristic ▼IncludedSchottkyDiode

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

F6923

Dual-ChannelLowNoiseAmplifier14GHz–17GHz

Features ■Frequency:14GHz-17GHz ■Gain:19.5dB ■Noisefigure:1.5dB ■OutputP1dB:-1.5dBm ■Powerconsumption:16mW/ch ■Channelisolation:35dB ■Supplyvoltage:0.9V-1.0V ■Commonbiascontrolinput ■Compactsizeforplanarintegrationonλ/2grid ■2.7×2.7×0.9mm,23-pin

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F6923

Dual-ChannelLowNoiseAmplifier13.75??17.3GHz

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F6923AVRI

Dual-ChannelLowNoiseAmplifier13.75??17.3GHz

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F6923AVRI

Dual-ChannelLowNoiseAmplifier14GHz–17GHz

Features ■Frequency:14GHz-17GHz ■Gain:19.5dB ■Noisefigure:1.5dB ■OutputP1dB:-1.5dBm ■Powerconsumption:16mW/ch ■Channelisolation:35dB ■Supplyvoltage:0.9V-1.0V ■Commonbiascontrolinput ■Compactsizeforplanarintegrationonλ/2grid ■2.7×2.7×0.9mm,23-pin

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F6923EVB

Dual-ChannelLowNoiseAmplifier14GHz–17GHz

Features ■Frequency:14GHz-17GHz ■Gain:19.5dB ■Noisefigure:1.5dB ■OutputP1dB:-1.5dBm ■Powerconsumption:16mW/ch ■Channelisolation:35dB ■Supplyvoltage:0.9V-1.0V ■Commonbiascontrolinput ■Compactsizeforplanarintegrationonλ/2grid ■2.7×2.7×0.9mm,23-pin

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F6923EVB

Dual-ChannelLowNoiseAmplifier13.75??17.3GHz

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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更多ST6923DQ供應(yīng)商 更新時(shí)間2025-1-26 11:06:00

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