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STH8N80

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STH8N80FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STW8N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8.2A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STW8N80

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

SVF8N80F

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80F

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80F

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80K

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80K

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80T

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80T

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF8N80T

8A,800VN-CHANNELMOSFET

GENERALDESCRIPTION SVF8N80T/F/KisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMstructureVDMOStechnology.Theimprovedplanarstripe cellandtheimprovedguardringterminalhavebeenespecially tailoredtominimizeon-

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

TSM8N80

800VN-ChannelPowerMOSFET

GeneralDescription TheTSM8N80N-ChannelenhancementmodePowerMOSFETisproducedbyplanarstripeDMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulse

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

TSM8N80CI

800VN-ChannelPowerMOSFET

GeneralDescription TheTSM8N80N-ChannelenhancementmodePowerMOSFETisproducedbyplanarstripeDMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulse

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

TSM8N80CZ

800VN-ChannelPowerMOSFET

GeneralDescription TheTSM8N80N-ChannelenhancementmodePowerMOSFETisproducedbyplanarstripeDMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulse

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
24+
TO-3P
2000
本站現(xiàn)庫存
 詢價
ST
2020+
DFN-8
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
ST
21+
DFN-8
2566
原裝現(xiàn)貨假一賠十
 詢價
ST
22
DFN-8
25000
3月31原裝,微信報價
 詢價
ST
DFN-8
893993
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ST
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
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ST
23+
DFN-8
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
ST
22+
DFN-8
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
 詢價
ST
23+
DFN-8
25000
原廠/代理渠道 價格優(yōu)勢
 詢價
ST
20+
DFN-8
25000
全新原裝現(xiàn)貨 假一賠十
 詢價
更多ST8N80供應(yīng)商 更新時間2025-1-12 16:00:00

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