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ST93C66CM3TR中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

ST93C66CM3TR
廠商型號(hào)

ST93C66CM3TR

功能描述

4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM

文件大小

107.57 Kbytes

頁面數(shù)量

13

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-21 22:50:00

ST93C66CM3TR規(guī)格書詳情

DESCRIPTION

This specification covers a range of 4K bit serial EEPROM products, the ST93C66 specified at 5V ± 10 and the ST93C67 specified at 3V to 5.5V. In the text, products are referred to as ST93C66.

The ST93C66 is a 4K bit Electrically Erasable ProgrammableMemory(EEPROM) fabricatedwith SGS-THOMSON’s High EnduranceSingle Polysilicon CMOS technology. The memory is accessed through a serial input (D) and output (Q). The 4K bit memory is divided into either 512 x 8 bit bytes or 256 x 16 bit words. The organization may be selected by a signal applied on the ORG input.

■ 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION

■ DUAL ORGANIZATION: 256 x 16 or 512 x 8

■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS

■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE

■ READY/BUSY SIGNAL DURING PROGRAMMING

■ SINGLE SUPPLY VOLTAGE:

– 4.5V to 5.5V for ST93C66 version

– 3V to 5.5V for ST93C67 version

■ SEQUENTIAL READ OPERATION

■ 5ms TYPICAL PROGRAMMING TIME

■ ST93C66 and ST93C67 are replaced by the M93C66

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