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ST93CS66ML3013TR中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
ST93CS66ML3013TR規(guī)格書詳情
DESCRIPTION
The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM)
fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 4K bit memory is organized as 256 x 16 bit words.The memory is accessed by a set of instructions which include Read, Write, Page Write, Write All and instructions used to set the memory protection. A Read instruction loads the address of the first word to be read into an internal address pointer.
? 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION
? SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE
? READY/BUSY SIGNAL DURING PROGRAMMING
? SINGLE SUPPLY VOLTAGE
– 3V to 5.5V for the ST93CS66
– 2.5V to 5.5V for the ST93CS67
? USER DEFINED WRITE PROTECTED AREA
? PAGE WRITE MODE (4 WORDS)
? SEQUENTIAL READ OPERATION
? 5ms TYPICAL PROGRAMMING TIME
? ST93CS66 and ST93CS67 are replaced by the M93S66
產(chǎn)品屬性
- 型號:
ST93CS66ML3013TR
- 制造商:
STMICROELECTRONICS
- 制造商全稱:
STMicroelectronics
- 功能描述:
4K 256 x 16 SERIAL MICROWIRE EEPROM
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
23+ |
DIP |
11200 |
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詢價 | |||
ST |
24+ |
SO-14 |
7500 |
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ST |
23+ |
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4500 |
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詢價 | ||
ST |
10+ |
DIP8 |
7800 |
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ST |
22+ |
SOP-8 |
2607 |
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2020+ |
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3000 |
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詢價 | |||
ST |
22+ |
SOP-8 |
25000 |
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詢價 | ||
ST |
23+ |
SO-14 |
7000 |
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ST |
SO-14 |
93480 |
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詢價 | |||
ST |
24+ |
SMD |
200 |
本站現(xiàn)貨庫存 |
詢價 |