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ST93CS66ML6013TR中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

ST93CS66ML6013TR
廠商型號

ST93CS66ML6013TR

功能描述

4K 256 x 16 SERIAL MICROWIRE EEPROM

文件大小

124.79 Kbytes

頁面數(shù)量

16

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-21 11:10:00

ST93CS66ML6013TR規(guī)格書詳情

DESCRIPTION

The ST93CS66 and ST93CS67 are 4K bit Electrically Erasable Programmable Memory (EEPROM)

fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 4K bit memory is organized as 256 x 16 bit words.The memory is accessed by a set of instructions which include Read, Write, Page Write, Write All and instructions used to set the memory protection. A Read instruction loads the address of the first word to be read into an internal address pointer.

? 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION

? SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE

? READY/BUSY SIGNAL DURING PROGRAMMING

? SINGLE SUPPLY VOLTAGE

– 3V to 5.5V for the ST93CS66

– 2.5V to 5.5V for the ST93CS67

? USER DEFINED WRITE PROTECTED AREA

? PAGE WRITE MODE (4 WORDS)

? SEQUENTIAL READ OPERATION

? 5ms TYPICAL PROGRAMMING TIME

? ST93CS66 and ST93CS67 are replaced by the M93S66

產(chǎn)品屬性

  • 型號:

    ST93CS66ML6013TR

  • 功能描述:

    Microwire Serial EEPROM

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