STAP57060中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 60 W with 14.3 dB gain @ 945 MHz /

28 V

■ ST advanced PowerSO-10 RF-STAP-package

Description

The STAP57060 is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

MOSFET. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 28 V in common source mode at frequencies of

up to 1 GHz. STAP57060 boasts the excellent

gain, linearity and reliability of ST’s latest LDMOS

technology mounted in STAP1 plastic RF power

package.

STAP package has been specially optmized for

RF needs and offers excellent performances and

ease of assembly.

Mounting recommendations are available in

www.st.com/rf/ (look for application note

AN1294)