STB140N10F4中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Features

■ Exceptional dv/dt capability

■ Extremely low on-resistance RDS(on)

■ 100 avalanche tested

Application

■ Switching applications

Description

This Power MOSFET is among the latest

developments that use an advanced technology

(STripFET? DeepGATE? technology), which

has been especially tailored to minimize on-state

resistance, provide superior switching

performance and withstand high energy pulse in

avalanche and commutation mode. The resulting

transistor shows extremely high packing density

for low on-resistance, rugged avalanche

characteristics and less critical alignment steps

therefore a remarkable manufacturing

reproducibility.