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STF40N60M2

N-channel600V,0.078typ.,34AMDmeshIIPluslowQgPowerMOSFETsinD2PAK,TO-220andTO-247packages

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF40N60M2

N-channel600V,0.078Ωtyp.,34AMDmeshM2PowerMOSFETsinTO-220FP,I2PAKFPandTO-3PFpackages

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(Coss)profile ?100avalanchetested ?Zener-protected Applications ?Switchingapplications ?LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh?M2tec

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFH40N60M2

N-channel600V,0.078typ.,34AMDmeshTMM2PowerMOSFETinaTO-220FPwidecreepagepackage

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected ?Widecreepagedistanceof4.25mmbetweenthepins Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh?M2technology.Thankstoitsstrip

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFI40N60M2

N-channel600V,0.078typ.,34AMDmeshIIPluslowQgPowerMOSFETsinD2PAK,TO-220andTO-247packages

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFI40N60M2

N-channel600V,0.078Ωtyp.,34AMDmeshM2PowerMOSFETsinTO-220FP,I2PAKFPandTO-3PFpackages

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(Coss)profile ?100avalanchetested ?Zener-protected Applications ?Switchingapplications ?LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh?M2tec

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFW40N60M2

N-channel600V,0.078Ωtyp.,34AMDmeshM2PowerMOSFETsinTO-220FP,I2PAKFPandTO-3PFpackages

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(Coss)profile ?100avalanchetested ?Zener-protected Applications ?Switchingapplications ?LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh?M2tec

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP40N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.088Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP40N60M2

N-channel600V,0.078typ.,34AMDmeshIIPluslowQgPowerMOSFETsinD2PAK,TO-220andTO-247packages

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP40N60M2

N-channel600V,0.078typ.,34AMDmeshIIPluslowQgPowerMOSFETsinD2PAK,TO-220andTO-247packages

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW40N60M2

N-channel600V,0.078typ.,34AMDmeshIIPluslowQgPowerMOSFETsinD2PAK,TO-220andTO-247packages

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW40N60M2

N-channel600V,0.078typ.,34AMDmeshIIPluslowQgPowerMOSFETsinD2PAK,TO-220andTO-247packages

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW40N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.088Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STWA40N60M2

N-channel600V,78mΩtyp.,34AMDmeshM2PowerMOSFETinaTO-247longleadspackage

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(Coss)profile ?100avalanchetested ?Zener-protected Applications ?Switchingapplications ?LLCresonantconverters Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thank

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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ST
263
93480
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ST
24+
TO-263
5000
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ST
05+
TO-263
8000
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ST
23+
TO-263
8795
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ST
16+
TO-263
10000
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ST
2020+
TO-263
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
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ST
2018+
TO263
6528
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ST
22+23+
TO263
75777
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ST
24+
TO-263
90000
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ST
24+
TO-263
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
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更多STB40N60M2-CUTTAPE供應(yīng)商 更新時(shí)間2025-1-8 17:07:00