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STB6N60M2

Extremely low gate charge

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD6N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF6N60M2

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

STF6N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF6N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STN6N60M2

N-channel600V,1.00typ.,5.5AMDmeshM2PowerMOSFETinanSOT223-2package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(Coss)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP6N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP6N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STU6N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STU6N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    STB6N60M2

  • 制造商：

    STMicroelectronics

  • 功能描述：

    POWER MOSFET - Tape and Reel

  • 功能描述：

    MOSFET N-CH 600V D2PAK

  • 功能描述：

    STB6N60M2 Series 600 V 4.5 A 1.2 Ohm N-channel Power MOSFET - TO-263-3

  • 功能描述：

    MOSFET N-Channel 600V 4.5A D2PAK

  • 功能描述：

    N-channel 600V,1.06Ohm,4.5A Power MOSFET

  • 功能描述：

    600V,1.06,4.5A,N-Channel Power MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
STMicroelectronics
24+
D2PAK
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
ST/意法
24+
TO-263
54
只做原廠渠道 可追溯貨源
 詢價(jià)
ST/意法半導(dǎo)體
22+
TO-263-3
6003
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價(jià)
STM
23+
D2PAK
19000
原裝現(xiàn)貨支持送檢
 詢價(jià)
ST(意法半導(dǎo)體)
23+
TO-263-3
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
ST/意法
13+
TO-263
54
深圳原裝進(jìn)口無鉛現(xiàn)貨
 詢價(jià)
STMicroelectronics
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價(jià)
ST
23+
TO-263
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
stm
23+
NA
1386
專做原裝正品,假一罰百!
 詢價(jià)
ST
22+23+
TO-263
27450
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
更多STB6N60M2供應(yīng)商 更新時(shí)間2025-2-23 14:14:00

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