STB6NA60中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 1 ?

■ ± 30V GATE TO SOURCE VOLTAGE RATING

■ 100 AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100oC

■ LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

■ REDUCED THRESHOLD VOLTAGE SPREAD

■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”)

■ SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE