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STB6NA80

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

TYPICALRDS(on)=1.68? ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD ■THROUGH-HOLEI2PAK(TO-262)POWERPACKAGEINTUBE(SUFFIX”-1”) ■SURFACE-M

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

H6NA80FI

N-CHANNEL800V-1.8ohm-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR

N-CHANNEL800V-1.8?-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.8? ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION APPLICAT

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STH6NA80FI

N-CHANNEL800V-1.8ohm-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR

N-CHANNEL800V-1.8?-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.8? ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION APPLICAT

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STH6NA80FI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.4A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STP6NA80

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP6NA80

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRos(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRos(

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

STP6NA80FI

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP6NA80FI

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRos(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRos(

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

STW6NA80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.4A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STW6NA80

N-CHANNEL800V-1.8ohm-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR

N-CHANNEL800V-1.8?-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.8? ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION APPLICAT

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
23+
TO-263
8795
詢價
ST
05+
TO-263
8000
原裝進口
 詢價
ST
16+
TO-263
10000
全新原裝現(xiàn)貨
 詢價
ST
2020+
TO-263
350000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
ST
24+
TO-263
90000
一級代理商進口原裝現(xiàn)貨、假一罰十價格合理
 詢價
ST
1709+
TO-263/D2-PAK
32500
普通
 詢價
ST/意法
23+
TO
10000
公司只做原裝正品
 詢價
ST
22+
TO
6000
十年配單,只做原裝
 詢價
ST
TO-263
93480
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ST
22+
TO
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
更多STB6NA80供應(yīng)商 更新時間2025-2-4 14:00:00

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