首頁 >STD13NM60ND>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
STD13NM60ND | N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
STD13NM60ND | isc N-Channel Mosfet Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel600V,0.28廓typ.,11AMDmesh??IIPowerMOSFETinTO-220FP,I?PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
N-channel600V,0.32typ.,11A,FDmeshIIPowerMOSFET(withfastdiode)inDPAK Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel600V,0.28廓,11AMDmesh??IIPowerMOSFETinTO-220FP | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel600V,0.28廓,11AMDmesh??IIPowerMOSFETinI?PAKFPpackage Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?DrainCurrent–ID=11A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=360mΩ(Max) ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?MinimumLot-to-Lotvariationsforrobustdevice performanceandrelia | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel600V,0.320廓,10APowerFLAT??(8x8)HVMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel600V,0.32typ.,11A,FDmeshIIPowerMOSFET(withfastdiode)inDPAK Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號：
STD13NM60ND
- 制造商：
STMicroelectronics
- 功能描述：
POWER MOSFET - Tape and Reel
- 功能描述：
MOSFET N-CH 600V 11A DPAK
- 功能描述：
STD13NM60ND Series N-Channel 600 V 0.38 Ohm SMT FDmesh II Power Mosfet - DPAK
- 功能描述：
MOSFET N-CH 600V 0.32Ohm 11A MDmesh II Plus
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST(意法半導(dǎo)體) |
23+ |
TO-252 |
9555 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
ST |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
STMicroelectronics |
18+ |
NA |
3680 |
進(jìn)口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
ST原裝 |
22+23+ |
TO-251 |
23217 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
ST原裝 |
24+ |
TO-251 |
9860 |
一級代理 |
詢價 | ||
ST |
2020+ |
TO-252 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
STMicroelectronics |
21+ |
DPAK |
2500 |
100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)! |
詢價 | ||
STM |
21+ |
TO252 |
2857 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
STM |
1809+ |
TO-252 |
1675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
ST |
21+ |
TO252 |
5000 |
全新原裝現(xiàn)貨 價格優(yōu)勢 |
詢價 |
相關(guān)規(guī)格書
更多- STD14NM50N
- STD150N3LLH6
- STD155N3LH6
- STD15NF10T4
- STD15W-1
- STD15W-2
- STD15W-6
- STD15W-C
- STD16N50M2
- STD16N60M2
- STD16N65M2-CUTTAPE
- STD16NF06LT4
- STD16NF25
- STD17NF03LT4
- STD17NF25
- STD17W-6
- STD1802T4
- STD180BLK
- STD18N65M5
- STD18NF25
- STD1NK60-1
- STD1NK80Z-1
- STD20
- STD20NF06T4
- STD220BLK
- STD25N10F7
- STD25NF10LT4
- STD25NF20
- STD26P3LLH6
- STD27N3LH5
- STD290BLK
- STD2HNK60Z-1
- STD2N105K5
- STD2N80K5
- STD2NC45-1
- STD2NK100Z/BKN
- STD2NK70Z-1
- STD300BLK
- STD30NF03LT4
- STD30NF06T4
- STD35N3LH5
- STD35NF06T4
- STD35NF3LLT4-CUTTAPE
- STD38NH02LT4
- STD3N40K3
相關(guān)庫存
更多- STD150BLK
- STD155N3H6
- STD15N65M5
- STD15W-0
- STD-15-W-2
- STD15W-3
- STD15W-8
- STD160BLK
- STD16N50M2-CUTTAPE
- STD16N65M2
- STD16N65M5
- STD16NF06T4
- STD17NF03L-1
- STD17NF03LT4
- STD17W-4
- STD17W-8
- STD1802T4-A
- STD18N55M5
- STD18NF03L
- STD1HN60K3
- STD1NK60T4
- STD1NK80ZT4
- STD20NF06LT4
- STD20NF20
- STD2410
- STD25NF10LA
- STD25NF10T4
- STD26NF10
- STD270BLK
- STD2805T4
- STD2HNK60Z
- STD2LN60K3
- STD2N62K3
- STD2N95K5
- STD2NK100Z
- STD2NK60Z-1
- STD2NK90ZT4
- STD30N10F7
- STD30NF06LT4
- STD30PF03LT4
- STD35NF06LT4
- STD35NF3LLT4
- STD36NH02L
- STD3LN62K3
- STD3N62K3
