DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size?” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.022?

■ EXCEPTIONAL dv/dt CAPABILITY

■ LOGIC LEVEL GATE DRIVE

■ ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL

■ ADD SUFFIX “-1” FOR ORDERING IN IPAK

■ CHARACTERIZATION ORIENTED FOR AUTOMOTIVE APPLICATIONS

APPLICATIONS

■ HIGH-EFFICIENCY DC-DC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-DC & DC-AC CONVERTERS

■ AUTOMOTIVE

STD30NF06L屬于分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 單個。意法半導(dǎo)體（ST）集團制造生產(chǎn)的STD30NF06L晶體管 - FET，MOSFET - 單個分立式場效應(yīng)晶體管 (FET) 廣泛用于功率轉(zhuǎn)換、電機控制、固態(tài)照明及其他應(yīng)用，它們具有高頻開關(guān)特性，同時又能承載大電流，使其在這些應(yīng)用中具備一定優(yōu)勢。這類晶體管廣泛應(yīng)用于要求額定電壓為幾百伏或更低的應(yīng)用，如果超出該額定電壓值，則 IGBT 等其他器件更具競爭力。