Description

The device in manufactured in low voltage PNP planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Features

■ Very low collector to emitter saturation voltage

■ DC current gain, hFE > 100

■ 3 A continuous collector current

■ 40 V breakdown voltage V(BR)CER

■ Surface mounting DPAK (TO-252) power

package in tape and reel packing

Applications

■ Power management in portable equipment

■ Voltage regulation in bias supply circuits

■ Switching regulator in battery charger applications

■ Heavy load driver

STD790AT4屬于分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個。意法半導體（ST）集團制造生產(chǎn)的STD790AT4晶體管 - 雙極性晶體管（BJT）- 單個分立式雙極結(jié)型晶體管 (BJT) 通常在音頻、無線電及其他應用中用于構(gòu)建模擬信號放大功能。作為大批量生產(chǎn)的第一批半導體器件之一，對于涉及高頻開關和在大電流或高電壓下工作的應用而言，它們的特性相比某些器件類型不占優(yōu)勢，但對于需要以極小的噪聲和失真構(gòu)建模擬信號的應用而言，它們?nèi)匀皇鞘走x技術。