STD9NM60-1中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

TYPICAL RDS(on) = 0.55 Ω

HIGH dv/dt AND AVALANCHE CAPABILITIES

IMPROVED ESD CAPABILITY

LOW INPUT CAPACITANCE AND GATE

CHARGE

LOW GATE INPUT RESISTANCE

TIGHT PROCESS CONTROL AND HIGH

MANUFACTORING YIELDS

DESCRIPTION

The MDmesh? is a new revolutionary MOSFET

technology that associates the Multiple Drain process

with the Company’s PowerMESH? horizontal

layout. The resulting product has an outstanding low

on-resistance, impressively high dv/dt and excellent

avalanche characteristics. The adoption of the

Company’s proprietary strip technique yields overall

dynamic performance that is significantly better than

that of similar completition’s products.

APPLICATIONS

The MDmesh? family is very suitable for increase

the power density of high voltage converters allowing

system miniaturization and higher efficiencies.