首頁 >STF11NM60ND>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
STF11NM60ND | N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Description ThedeviceisanN-channelFDmesh?IIPowerMOSFETthatbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwi | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
STF11NM60ND | N-channel 600 V, 0.37 廓, 10 A, FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
STF11NM60ND | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
N-channel600V-0.37廓-10A-FDmesh??IIPowerMOSFETI2PAK,TO-220,TO-220FP,IPAK,DPAK Description ThedeviceisanN-channelFDmesh?IIPowerMOSFETthatbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwi | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel600V,0.37廓,10A,FDmesh??IIPowerMOSFETI2PAK,TO-220,TO-220FP,IPAK,DPAK | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ?DrainCurrent–ID=6.3A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchinga | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
N-channel650VTJmax-0.4OHM-11ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-CHANNEL600V-0.4ohm-11ATO-220/TO-220FP/D2PAK/I2PAKMDmesh??owerMOSFET Description TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoption | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-CHANNEL600V-0.4ohm-11ATO-220/TO-220FP/I2PAKMDmesh??owerMOSFET DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dt.TheadoptionoftheCompany’sproprietarystriptechniq | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-CHANNEL600V-0.4ohm-11ATO-220/TO-220FP/I2PAKMDmesh??owerMOSFET DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dt.TheadoptionoftheCompany’sproprietarystriptechniq | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel30V-0.014ohm-45ATO-220-TO-220FP-D2PAKSTripFETIIpowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel600V-0.40OHM-11A-TO-220/TO-220FP/D2PAK/I2PAKFDmeshTMPowerMOSFET(withfastdiode) DESCRIPTION TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■TYPICALRDS(on)=0.40? ■HIGHdv/dtANDAVALANCHECA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel600V-0.40OHM-11A-TO-220/TO-220FP/D2PAK/I2PAKFDmeshTMPowerMOSFET(withfastdiode) DESCRIPTION TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■TYPICALRDS(on)=0.40? ■HIGHdv/dtANDAVALANCHECA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel650VTJmax-0.4OHM-11ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
詳細(xì)參數(shù)
- 型號：
STF11NM60ND
- 功能描述：
MOSFET N-Ch, 600V-0.37ohms FDMesh 10A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
24+ |
TO-220FP |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
STMICRO |
2405+ |
原廠封裝 |
8900 |
15年芯片行業(yè)經(jīng)驗(yàn)/只供原裝正品:0755-83267371鄒小姐 |
詢價(jià) | ||
ST/意法 |
21+ |
NA |
9450 |
只做原裝,假一罰十 |
詢價(jià) | ||
ST |
23+ |
TO220F |
6996 |
只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
STM |
21+ |
TO-220FP-3 |
1000 |
原裝正品 有掛有貨 |
詢價(jià) | ||
ST/意法 |
24+ |
TO-220F |
12 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
STM |
19+/21+ |
1000 |
TO-220FP-3 |
詢價(jià) | |||
ST/意法半導(dǎo)體 |
22+ |
TO-220-3 |
6001 |
原裝正品現(xiàn)貨 可開增值稅發(fā)票 |
詢價(jià) | ||
STM |
23+ |
TO-220FP-3 |
1000 |
原裝現(xiàn)貨支持送檢 |
詢價(jià) | ||
ST/意法半導(dǎo)體 |
2023 |
TO-220-3 |
6000 |
公司原裝現(xiàn)貨/支持實(shí)單 |
詢價(jià) |
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