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STF7NM60N

N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF7NM60N

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

7NM60

7A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC7NM60isahighvoltagesuperjunctionMOSFETandis designedtohavebettercharacteristics. TheUTC7NM60Utilizinganadvancedcharge-balance technology,enhancesystemefficiency,improveEMIandreliability. suchaslowgatecharge,lowon-stateresistanceandhavea

UTCUnisonic Technologies

友順友順科技股份有限公司

STD7NM60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STD7NM60N

N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL7NM60N

Lowinputcapacitanceandgatecharge,Lowgateinputresistance

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP7NM60N

N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP7NM60N

iscN-ChannelMOSFETTransistor

FEATURES ?DrainCurrent–ID=5A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=900mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingapp

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STU7NM60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STU7NM60N

N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    STF7NM60N

  • 功能描述:

    MOSFET N-Ch 600 V 4.7 A MDmesh 2nd Gen

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST/意法
22+
TO-220F
5000
原廠原裝現(xiàn)貨
詢價(jià)
STM
21+
TO-220FP-3
1000
原裝正品 有掛有貨
詢價(jià)
STM
18+
1000
TO-220FP-3
詢價(jià)
ST/意法半導(dǎo)體
22+
NA
30000
我司100%原裝正品現(xiàn)貨,現(xiàn)貨眾多歡迎加微信
詢價(jià)
原廠原包
24+
原裝
38560
原裝進(jìn)口現(xiàn)貨,工廠客戶可以放款。17377264928微信同
詢價(jià)
ST/意法
24+
TO-220F
1851
原廠授權(quán)代理 價(jià)格絕對(duì)優(yōu)勢(shì)
詢價(jià)
ST/意法半導(dǎo)體
22+
TO-220-3
6003
原裝正品現(xiàn)貨 可開(kāi)增值稅發(fā)票
詢價(jià)
STM
23+
TO-220FP-3
1000
原裝現(xiàn)貨支持送檢
詢價(jià)
ST專家
2021+
TO-220F
6800
原廠原裝,歡迎咨詢
詢價(jià)
STM
2405+
原廠封裝
33000
原裝正品,渠道可追溯
詢價(jià)
更多STF7NM60N供應(yīng)商 更新時(shí)間2024-12-25 14:10:00