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STGF20M65DF2

Marking:G20M65DF2;Package:TO-220FP;Trench gate field-stop, M series, 650 V, 20 A, low-loss IGBT

Features ?Highshort-circuitwithstandtime ?VCE(sat)=1.55V(typ.)@IC=20A ?Tightparameterdistribution ?Saferparalleling ?Lowthermalresistance ?Softandveryfastrecoveryantiparalleldiode Applications ?Motorcontrol ?UPS ?PFC ?General-purposeinverters Desc

STMICROELECTRONICSSTMicroelectronics

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STGF30H60DF

Marking:GF30H60DF;Package:TO-220FP;600 V, 30 A high speed trench gate field-stop IGBT

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

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STGF30NC60S

Marking:GF30NC60S;Package:TO-220FP;30 A, 600 V, fast IGBT

Features ■Optimizedperformanceformediumoperating frequenciesupto5kHzinhardswitching ■Lowon-voltagedrop(VCE(sat)) ■Highcurrentcapability Application Motordrive Description ThisdeviceutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betw

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STGF3HF60HD

Marking:GF3HF60HD;Package:TO-220FP;4.5 A, 600 V very fast IGBT with Ultrafast diode

Description Thesedevicesarebasedonanewadvanced planartechnologyconcepttoyieldanIGBTwith morestableswitchingperformance(Eoff)versus temperature,aswellaslowerconductionlosses. Features ?Minimaltailcurrent ?Lowconductionandswitchinglosses ?Ultrafastsoftre

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STGF3NB60FD

N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH??IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“F”identifiesafamilyoptimizedtoachieveverylowswitchingtimesforfrequencya

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STGF3NC120HD

Marking:GF3NC120HD;Package:TO-220FP;7 A, 1200 V very fast IGBT with ultrafast diode

Description ThishighvoltageandveryfastIGBTshowsan excellenttrade-offbetweenlowconductionlosses andfastswitchingperformance.Itisdesignedin PowerMESH?technologycombinedwithhigh voltageultrafastdiode. Features ■Highvoltagecapability ■Highspeed ■Verysoftult

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STGF3NC120HD

Very fast IGBT

DESCRIPTION ·Highvoltagecapability ·HighSpeedSwitching&LowPowerLoss ·Veryultrafastrecoverydiode APPLICATIONS ?Homeappliance ?Lighting

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STGF5H60DF

Marking:GF5H60DF;Package:TO-220FP;Trench gate field-stop IGBT, H series 600 V, 5 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfield-stop structure.ThedevicesarepartoftheHseriesof IGBTs,whichrepresentanoptimumcompromise betweenconductionandswitchinglossesto maximizetheefficiencyofhighswitching frequen

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STGF7H60DF

Marking:GF7H60DF;Package:TO-220FP;Trench gate field-stop IGBT, H series 600 V, 7 A high speed

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

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STGF7NC60HD

Marking:GF7NC60HD;Package:TO-220FP;N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT

GeneralFeatures ■LOWERON-VOLTAGEDROP(Vcesat) ■OFFLOSSESINCLUDETAILCURRENT ■LOSSESINCLUDEDIODERECOVERY ENERGY ■LOWERCRES/CIESRATIO ■HIGHFREQUENCYOPERATIONUPTO70 KHz ■VERYSOFTULTRAFASTRECOVERYANTI PARALLELDIODE ■NEWGENERATIONPRODUCTSWITH TIGHTERPARAMETER

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