STG15M120F3D7中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

Features

? 10 μs of short-circuit withstanding time

? Low VCE(sat) = 1.85 V (typ.) @ IC = 15 A

? Positive VCE(sat) temperature coefficient

? Tight parameter distribution

? Maximum junction temperature: TJ = 175 °C

Applications

? Industrial motor control

? Industrial drives

? Solar inverters

? Uninterruptable power supplies (UPS)

? PFC converters

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss

and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.