首頁 >STP11NM60ZFP>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-channel30V-0.014ohm-45ATO-220-TO-220FP-D2PAKSTripFETIIpowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel600V-0.40OHM-11A-TO-220/TO-220FP/D2PAK/I2PAKFDmeshTMPowerMOSFET(withfastdiode) DESCRIPTION TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■TYPICALRDS(on)=0.40? ■HIGHdv/dtANDAVALANCHECA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel600V-0.37ohm-10A-TO-220-TO-220FP-IPAK-DPAKSecondgenerationMDmeshPowerMOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel600V-0.37ohm-10A-TO-220-TO-220FP-IPAK-DPAKSecondgenerationMDmeshPowerMOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-channel30V-0.014ohm-45ATO-220-TO-220FP-D2PAKSTripFETIIpowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel600V-0.40OHM-11A-TO-220/TO-220FP/D2PAK/I2PAKFDmeshTMPowerMOSFET(withfastdiode) DESCRIPTION TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■TYPICALRDS(on)=0.40? ■HIGHdv/dtANDAVALANCHECA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-channel600V-0.40OHM-11A-TO-220/TO-220FP/D2PAK/I2PAKFDmeshTMPowerMOSFET(withfastdiode) DESCRIPTION TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■TYPICALRDS(on)=0.40? ■HIGHdv/dtANDAVALANCHECA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel650VTJmax-0.4OHM-11ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel600V-0.37ohm-10A-TO-220-TO-220FP-IPAK-DPAKSecondgenerationMDmeshPowerMOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-CHANNEL600V-0.4ohm-11ATO-220/TO-220FP/D2PAK/I2PAKMDmesh??owerMOSFET Description TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoption | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel650VTJmax-0.4OHM-11ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-channel30V-0.014ohm-45ATO-220-TO-220FP-D2PAKSTripFETIIpowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel600V-0.40OHM-11A-TO-220/TO-220FP/D2PAK/I2PAKFDmeshTMPowerMOSFET(withfastdiode) DESCRIPTION TheFDmesh?associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■TYPICALRDS(on)=0.40? ■HIGHdv/dtANDAVALANCHECA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ST/意法 |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ST/意法 |
2022 |
TO-220F |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
ST/意法 |
23+ |
TO-220F |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
ST |
02+ |
TO-220F |
46 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
ST |
TO-220F |
93480 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ST |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
ST/意法 |
23+ |
NA/ |
46 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
ST/意法 |
22+ |
TO-220F-3 |
20000 |
原裝現(xiàn)貨,實單支持 |
詢價 | ||
ST |
23+24 |
TO-220F |
59630 |
主營原裝MOS,二三級管,肖特基,功率場效應(yīng)管 |
詢價 |
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