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STB12NK80Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10.5A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STB12NK80Z

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH??owerMOSFET

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

STB12NK80Z

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH??owerMOSFET

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

STB12NK80Z

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH??owerMOSFET

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

STB12NK80Z

N-channel800V-0.65廓-10.5A-TO-220-D2PAK-TO-247Zener-ProtectedSuperMESH??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB12NK80Z

N-CHANNEL800V-0.65OHM-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESHPowerMOSFET

Description ThesedevicesareN-channelZener-protectedPowerMOSFETsdevelopedusingSTMicroelectronicsSuperMESH?technology,achievedthroughoptimizationofSTswellestablishedstrip-basedPowerMESH?layout.Inadditiontoasignificantreductioninonresistance,thisdeviceisdesignedtoe

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB12NK80Z-S

N-CHANNEL800V-0.65ohm-10.5AI2SPAKZener-ProtectedSuperMESHPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF12NK80Z

N-channel800V,0.65Ωtyp.,10.5AZener-protectedSuperMESH?PowerMOSFETinD2PAK,TO-220FP,TO-220andTO-247

Features ■Extremelyhighdv/dtcapability ■Improvedesdcapability ■100avalanchetested ■Gatechargeminimized ■Verylowintrinsiccapacitances ■Verygoodmanufacturingreliability Applications ■Switchingapplications Description ThesedevicesareN-channelZener-protected Pow

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF12NK80Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10.5A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STP12NK80Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10.5A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STP12NK80Z

N-channel800V,0.65Ωtyp.,10.5AZener-protectedSuperMESH?PowerMOSFETinD2PAK,TO-220FP,TO-220andTO-247

Features ■Extremelyhighdv/dtcapability ■Improvedesdcapability ■100avalanchetested ■Gatechargeminimized ■Verylowintrinsiccapacitances ■Verygoodmanufacturingreliability Applications ■Switchingapplications Description ThesedevicesareN-channelZener-protected Pow

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP12NK80Z

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·motordrive,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STP12NK80Z

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH??owerMOSFET

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

STP12NK80Z

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH??owerMOSFET

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

STP12NK80Z

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH??owerMOSFET

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

STP12NK80Z

N-CHANNEL800V-0.65OHM-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESHPowerMOSFET

Description ThesedevicesareN-channelZener-protectedPowerMOSFETsdevelopedusingSTMicroelectronicsSuperMESH?technology,achievedthroughoptimizationofSTswellestablishedstrip-basedPowerMESH?layout.Inadditiontoasignificantreductioninonresistance,thisdeviceisdesignedtoe

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP12NK80Z

N-channel800V-0.65廓-10.5A-TO-220-D2PAK-TO-247Zener-ProtectedSuperMESH??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STW12NK80Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10.5A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STW12NK80Z

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·motordrive,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STW12NK80Z

N-channel800V,0.65Ωtyp.,10.5AZener-protectedSuperMESH?PowerMOSFETinD2PAK,TO-220FP,TO-220andTO-247

Features ■Extremelyhighdv/dtcapability ■Improvedesdcapability ■100avalanchetested ■Gatechargeminimized ■Verylowintrinsiccapacitances ■Verygoodmanufacturingreliability Applications ■Switchingapplications Description ThesedevicesareN-channelZener-protected Pow

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

供應商型號品牌批號封裝庫存備注價格
ST
20+
TO-220F
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
ST
TO-220F
93480
集團化配單-有更多數量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ST
23+
TO-220F
10800
只做原裝 歡迎咨詢
 詢價
ST/意法
22+
TO-220
96915
詢價
ST/意法
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
ST/意法
23+
TO-220F
11200
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
ST
23+
TO-220
8795
詢價
ST
24+
TO-220-3
50
詢價
DISCRETE
1000
STM
15000
詢價
更多STP12NK80ZFP供應商 更新時間2025-1-10 17:19:00

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