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STP13NM60N

N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP13NM60N

Isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP13NM60ND

N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP13NM60ND

isc N-Channel Mosfet Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

13NM60

13A,600VN-CHANNELSUPER-JUNCTIONMOSFET

?DESCRIPTION TheUTC13NM60isaSuperJunctionMOSFETStructure andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceanda highruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedatAC-DCconvertersforpower

UTCUnisonic Technologies

友順友順科技股份有限公司

13NM60N

N-channel600V,0.320廓,10APowerFLAT??(8x8)HVMDmesh??IIPowerMOSFET

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

13NM60N

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

STB13NM60N

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB13NM60N

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

STB13NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STB13NM60ND

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STD13NM60N

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD13NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STD13NM60N

N-channel600V,0.28廓typ.,11AMDmesh??IIPowerMOSFETinTO-220FP,I?PAK,TO-220,IPAK,TO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD13NM60ND

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STD13NM60ND

N-channel600V,0.32typ.,11A,FDmeshIIPowerMOSFET(withfastdiode)inDPAK

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF13NM60N

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

STF13NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF13NM60N

N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF13NM60N

N-channel600V,0.28廓typ.,11AMDmesh??IIPowerMOSFETinTO-220FP,I?PAK,TO-220,IPAK,TO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    STP13NM60N

  • 功能描述：

    MOSFET N-Ch 600 Volt 11 Amp Power MDmesh

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
STMicroelectronics
24+
TO-220
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
ST/意法
22+
TO-220-3
5000
原廠原裝現(xiàn)貨
 詢價
ST
20+
TO-220AB
3350
硬核芯力 只做原裝 現(xiàn)貨實單來談
 詢價
STM
21+
TO-220-3
400
原裝正品 有掛有貨
 詢價
ST/意法
24+
TO-220
3
只做原廠渠道 可追溯貨源
 詢價
ST(意法半導(dǎo)體)
23+
TO-220
10000
只做原裝現(xiàn)貨 假一賠萬
 詢價
ST
20+
TO-220AB
7030
只做原裝,公司現(xiàn)貨,提供一站式BOM配單服務(wù)!
 詢價
ST/意法
TO-220
貨真價實,假一罰十
25000
詢價
ST/意法
2021+
TO-220-3
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
ST
11+
TO-220
135
只做原裝正品
 詢價
更多STP13NM60N供應(yīng)商 更新時間2025-1-8 18:11:00

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