首頁 >STP14NM65N>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
STP14NM65N | N-channel 650 V, 0.33 廓, 12 A MDmesh??II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’slowestonresistanceandgatecharge.Itisthereforesuitableforthemos | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | |
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.38Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel650V,0.33廓,12AMDmesh??IIPowerMOSFETTO-220,TO-220FP,D2PAK,I2PAK,TO-247 Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’slowestonresistanceandgatecharge.Itisthereforesuitableforthemos | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel650V,0.33廓,12AMDmesh??IIPowerMOSFETTO-220,TO-220FP,D2PAK,I2PAK,TO-247 Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’slowestonresistanceandgatecharge.Itisthereforesuitableforthemos | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.38Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.38Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel650V,0.33廓,12AMDmesh??IIPowerMOSFETTO-220,TO-220FP,D2PAK,I2PAK,TO-247 Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’slowestonresistanceandgatecharge.Itisthereforesuitableforthemos | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.38Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC |
詳細參數(shù)
- 型號:
STP14NM65N
- 功能描述:
MOSFET N-channel 650V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
TO220 |
6996 |
只做原裝正品現(xiàn)貨 |
詢價 | ||
ST |
21+ |
VQFN |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
STMicroelectronics |
23+ |
TO-220 |
6000 |
15年原裝正品企業(yè) |
詢價 | ||
ST |
24+ |
TO-220-3 |
945 |
詢價 | |||
ST |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應 |
詢價 | ||
ST |
24+ |
TO-220 |
5000 |
原裝現(xiàn)貨熱賣 |
詢價 | ||
ST |
24+ |
TO-220-3(直引 |
945 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ST全系列 |
22+23+ |
TO-220 |
26759 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
ST |
2020+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
STM原廠目錄 |
24+ |
TO-220 |
28500 |
授權代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售 |
詢價 |
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