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STP31N65M5中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書
廠商型號 |
STP31N65M5 |
功能描述 | N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages |
文件大小 |
1.66434 Mbytes |
頁面數(shù)量 |
25 頁 |
生產廠商 | STMicroelectronics |
企業(yè)簡稱 |
STMICROELECTRONICS【意法半導體】 |
中文名稱 | 意法半導體(ST)集團官網 |
原廠標識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2024-11-18 15:37:00 |
STP31N65M5規(guī)格書詳情
Description
These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
? Worldwide best RDS(on) * area
? Higher VDSS rating and high dv/dt capability
? Excellent switching performance
? 100 avalanche tested
Applications
? Switching applications
產品屬性
- 型號:
STP31N65M5
- 功能描述:
MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
N/A |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
ST/意法半導體 |
24+ |
TO-220-3 |
10000 |
十年沉淀唯有原裝 |
詢價 | ||
ST/意法半導體 |
21+ |
TO-220-3 |
8800 |
公司只做原裝正品 |
詢價 | ||
ST |
22+ |
TO2203 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
ST/意法半導體 |
21+ |
TO-220-3 |
8860 |
只做原裝,質量保證 |
詢價 | ||
ST/意法半導體 |
24+ |
TO-220-3 |
7188 |
秉承只做原裝 終端我們可以提供技術支持 |
詢價 | ||
ST |
2020+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
ST |
23+ |
TO-220 |
8650 |
受權代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
ST原裝 |
19+ |
TO-220 |
9860 |
一級代理 |
詢價 | ||
ST/意法 |
2022+ |
NA |
8600 |
原裝正品,歡迎來電咨詢! |
詢價 |