首頁 >STP3LN62K3>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
STP3LN62K3 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=2.5A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
STP3LN62K3 | N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFET DPAK, TO-220FP, TO-220, IPAK Features ■100avalanchetested ■Extremelyhighdv/dtcapability ■Verylowintrinsiccapacitance ■Improveddiodereverserecoverycharacteristics ■Zener-protected Application Switchingapplications Description Thesedevicesaremadeusingthe SuperMESH3?PowerMOSFETtechnologyt | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
STP3LN62K3 | N-Channel 650 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | |
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-channel620V,2.5廓,2.5ASuperMESH3??PowerMOSFETDPAK,TO-220FP,TO-220,IPAK Features ■100avalanchetested ■Extremelyhighdv/dtcapability ■Verylowintrinsiccapacitance ■Improveddiodereverserecoverycharacteristics ■Zener-protected Application Switchingapplications Description Thesedevicesaremadeusingthe SuperMESH3?PowerMOSFETtechnologyt | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel620V,2.5廓,2.5ASuperMESH3??PowerMOSFEDPAK,TO-220FP,TO-220,IPAK | STATEK Statek Corporation | STATEK | ||
N-channel620V,2.5廓,2.5ASuperMESH3??PowerMOSFETDPAK,TO-220FP,TO-220,IPAK Features ■100avalanchetested ■Extremelyhighdv/dtcapability ■Verylowintrinsiccapacitance ■Improveddiodereverserecoverycharacteristics ■Zener-protected Application Switchingapplications Description Thesedevicesaremadeusingthe SuperMESH3?PowerMOSFETtechnologyt | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2.5A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-channel620V,2.5廓,2.5ASuperMESH3??PowerMOSFETDPAK,TO-220FP,TO-220,IPAK Features ■100avalanchetested ■Extremelyhighdv/dtcapability ■Verylowintrinsiccapacitance ■Improveddiodereverserecoverycharacteristics ■Zener-protected Application Switchingapplications Description Thesedevicesaremadeusingthe SuperMESH3?PowerMOSFETtechnologyt | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
詳細(xì)參數(shù)
- 型號(hào):
STP3LN62K3
- 功能描述:
MOSFET N-Ch 620V 2.5 Ohm 2.5A SuperMESH3
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
STMicroelectronics |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190 |
詢價(jià) | ||
ST |
22+23+ |
TO220 |
20521 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
STMicroelectronics |
2021++ |
只做原裝 |
5850 |
進(jìn)口原裝假一賠百,現(xiàn)貨熱賣 |
詢價(jià) | ||
S |
23+ |
TO-220 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
22+ |
NA |
3000 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | |||
STM |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ST/意法 |
23+ |
TO220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ST |
22+ |
TO2203 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
ST/意法 |
2022 |
TO220 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
STM |
11+ |
TO-220 |
1000 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) |
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