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STP4N52K3

N-channel 525 V, 2.5 A, 2.1typ., SuperMESH3 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP4N52K3

N-Channel 650 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

4N52K3

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

STD4N52K3

N-channel525V,2.5A,2.1廓typ.,SuperMESH3??PowerMOSFETinDPAK,TO-220FP,TO-220andIPAKpackages

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD4N52K3

N-channel525V,2.5A,2.1typ.,SuperMESH3PowerMOSFETinDPAK,TO-220FP,TO-220andIPAKpackages

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD4N52K3

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

STF4N52K3

N-channel525V,2.5A,2.1typ.,SuperMESH3PowerMOSFETinDPAK,TO-220FP,TO-220andIPAKpackages

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STU4N52K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.5A@TC=25℃ ·DrainSourceVoltage-VDSS=525V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STU4N52K3

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

STU4N52K3

N-channel525V,2.5A,2.1typ.,SuperMESH3PowerMOSFETinDPAK,TO-220FP,TO-220andIPAKpackages

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    STP4N52K3

  • 功能描述:

    MOSFET N-Ch 525V 2.5A 2.1 Ohm SuperMESH3

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST/意法
24+
NA
860000
明嘉萊只做原裝正品現(xiàn)貨
詢(xún)價(jià)
STM
21+
TO-220-3
41000
原裝正品 有掛有貨
詢(xún)價(jià)
ST/意法
22+
TO-220
2769
絕對(duì)原裝!公司現(xiàn)貨!
詢(xún)價(jià)
STM
18+/19+
41000
TO-220-3
詢(xún)價(jià)
ST(意法半導(dǎo)體)
23+
TO-220
10000
只做原裝現(xiàn)貨 假一賠萬(wàn)
詢(xún)價(jià)
STM
23+
TO-220-3
41000
原裝現(xiàn)貨支持送檢
詢(xún)價(jià)
ST/意法
21+
TO-220-3
60000
絕對(duì)原裝正品現(xiàn)貨,假一罰十
詢(xún)價(jià)
ST
23+
NA
30000
15年原裝正品企業(yè)
詢(xún)價(jià)
ST
1645+
?
14860
只做原裝進(jìn)口,假一罰十
詢(xún)價(jià)
ST
22+23+
TO220
19973
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢(xún)價(jià)
更多STP4N52K3供應(yīng)商 更新時(shí)間2025-1-23 19:10:00