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STP4NB100

N - CHANNEL 1000V - 4ohm - 3.8A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP4NB100

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.4Ω(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·AutomaticTestEquipment ·High-SideSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP4NB100FP

N - CHANNEL 1000V - 4ohm - 3.8A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

詳細(xì)參數(shù)

  • 型號:

    STP4NB100

  • 功能描述:

    MOSFET N-Ch 1000 Volt 4 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
23+
TO-220
8795
詢價
ST
2020+
TO-220
99
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
ST
24+
TO-220
2500
原裝現(xiàn)貨熱賣
詢價
ST
24+
N/A
2650
詢價
ST
17+
TO-220
6200
詢價
ST
24+
TO-220
5000
只做原裝公司現(xiàn)貨
詢價
ST
23+
TO-220
10000
專做原裝正品,假一罰百!
詢價
ST
20+
TO-220
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
ST
2020+
TO220
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
ST
24+
TO-220
6430
原裝現(xiàn)貨/歡迎來電咨詢
詢價
更多STP4NB100供應(yīng)商 更新時間2025-1-22 17:31:00