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STP6635GH

P-Channel 30-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STP6635GH

P Channel Enhancement Mode MOSFET

STANSON

Stanson Technology

AD6635

4-Channel,80MSPSWCDMAReceiveSignalProcessor(RSP)

GENERALDESCRIPTION TheAD6635isamultimode,8-channel,digitalReceiveSignalProcessor(RSP)capableofprocessinguptofourWCDMAchannels.Eachchannelconsistsoffourcascadedsignal-processingelements:afrequencytranslator,twoCICdecimatingfilters,andaprogrammablecoefficient-d

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD6635BB

4-Channel,80MSPSWCDMAReceiveSignalProcessor(RSP)

GENERALDESCRIPTION TheAD6635isamultimode,8-channel,digitalReceiveSignalProcessor(RSP)capableofprocessinguptofourWCDMAchannels.Eachchannelconsistsoffourcascadedsignal-processingelements:afrequencytranslator,twoCICdecimatingfilters,andaprogrammablecoefficient-d

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD6635BB/PCB

4-Channel,80MSPSWCDMAReceiveSignalProcessor(RSP)

GENERALDESCRIPTION TheAD6635isamultimode,8-channel,digitalReceiveSignalProcessor(RSP)capableofprocessinguptofourWCDMAchannels.Eachchannelconsistsoffourcascadedsignal-processingelements:afrequencytranslator,twoCICdecimatingfilters,andaprogrammablecoefficient-d

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AEC-6635

FanlessEmbeddedControllerWithIntelCorei7/i5Processor

AAEONAAEON Technology

研揚(yáng)科技研揚(yáng)科技（蘇州）有限公司

AWT6635

HELP3DCTM(Band5)LTE/WCDMA/CDMALinearPAModule

ANADIGICS

ANADIGICS, Inc

CPH6635

ComplementaryDualCPH6PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

CPH6635-TL-H

ComplementaryDualCPH6PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

EM6635

LowPowerMicrocontrollerwithRCand32kHzoscillatorsand9highdriveoutputs

EMMICRO

EM Microelectronic - MARIN SA

FDD6635

N-channelEnhancementModePowerMOSFET

Features ?VDS=30V,ID=80A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDD6635

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=59A@TC=25℃ ·DrainSourceVoltage :VDSS=35V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDD6635

35VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeenproducedusingFairchildSemiconductor’sproprietaryPowerTrenchtechnologytodeliverlowRdsonandoptimizedBvdsscapabilitytooffersuperiorperformancebenefitintheapplications. Features ?59A,35VRDS(ON)=10mΩ@VGS=10VRDS(ON

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF6635

DirectFETPowerMOSFET

Description TheIRF6635combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutgeo

IRF

International Rectifier

IRF6635PBF

CompatiblewithexistingSurfaceMountTechniques

Description TheIRF6635PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635PBF

DirectFETPowerMOSFET

Description TheIRF6635PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635PBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6635TRPBF

CompatiblewithexistingSurfaceMountTechniques

Description TheIRF6635PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635TRPBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6635TRPBF

DirectFETPowerMOSFET

Description TheIRF6635PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

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STANSON
24+
TO-252
503907
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
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S
2020+
TO-252
80000
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VBsemi(臺(tái)灣微碧)
2112+
TO-252
105000
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S
23+
TO-251
10000
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VBSEMI/臺(tái)灣微碧
23+
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50000
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STANSONTECH
2022
TO-252
80000
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STANSONTECH
2022+
TO-252
5000
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VBSEMI臺(tái)灣微碧
23+
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22820
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STANSON
12+
TO-252-2L
1338
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STANSON
24+
TO-252-2L
1338
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更多STP6635GH供應(yīng)商 更新時(shí)間2025-1-18 17:06:00

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