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STP6NB50FP中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

STP6NB50FP
廠商型號(hào)

STP6NB50FP

功能描述

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

文件大小

115.17 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-18 17:21:00

STP6NB50FP規(guī)格書詳情

DESCRIPTION

Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 1.35 ?

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

產(chǎn)品屬性

  • 型號(hào):

    STP6NB50FP

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

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