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STP8NM60FP

isc N-Channel MOSFET Transistor

FEATURES ?DrainCurrent–ID=8A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingapplic

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP8NM60FP

N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh? Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description TheMDmesh?isanewrevolutionaryPower MOSFETtechnologythatassociatesthemultiple drainprocesswiththecompany’sPowerMESH? horizontallayout.Theresultingproducthasan outstandinglowon-resistance,impressivelyhigh dv/dtandexcellentavalanchecharacteristics.The

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP8NM60FP

N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh??Power MOSFET

Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP8NM60FP

N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET

Description TheMDmesh?isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP8NM60FP

N-channel 650 V@Tjmax, 0.9 廓, 8 A MDmesh??Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP8NM60N

N-channel600V-0.56廓-7A-TO-220-TO-220FP-IPAK-DPAKsecondgenerationMDmesh??PowerMOSFET

Description ThisseriesofdevicesimplementssecondgenerationMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemandingh

STMICROELECTRONICSSTMicroelectronics

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STP8NM60N

N-channel600V,0.56廓,7AMDmesh??IIPowerMOSFETTO-220,TO-220FP,IPAK,DPAK,D2PAK

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP8NM60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.0A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.65Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP8NM60ND

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STP8NM60ND

N-channel600V,0.59,7A,FDmeshIIPowerMOSFET

Description TheFDmesh?IIseriesbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutandassociatesalladvantagesofreducedonresistanceandfastswitchingwithanintrinsicfastrecoverybody

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP8NM60ND

iscN-ChannelMOSFETTransistor

FEATURES ?DrainCurrent–ID=7A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingappl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STU8NM60ND

N-channel600V,0.59,7A,FDmeshIIPowerMOSFET

Description TheFDmesh?IIseriesbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutandassociatesalladvantagesofreducedonresistanceandfastswitchingwithanintrinsicfastrecoverybody

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STU8NM60ND

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STX8NM60N

N-channel600V,0.56廓,7AMDmesh??IIPowerMOSFETTO-220,TO-220FP,IPAK,DPAK,D2PAK

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STP8NM60FP

  • 功能描述：

    MOSFET N-Ch 600 Volt 8 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
STKOR
19+
TO-220F
8906
詢價(jià)
ST/意法
2105+
TO-220
10053
詢價(jià)
ST
23+
TO/220F
7000
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購!
 詢價(jià)
ST/進(jìn)口原
17+
TO-220F
6200
詢價(jià)
ST
24+
TO220ISOFULLPACK
8866
詢價(jià)
ST
23+
TO-220F
8795
詢價(jià)
ST
24+
TO-220F
20000
原裝現(xiàn)貨熱賣
 詢價(jià)
ST
23+
TO-220F
10000
專做原裝正品,假一罰百!
 詢價(jià)
ST全系列
22+23+
TO-220F
26329
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
STM
2018+
26976
代理原裝現(xiàn)貨/特價(jià)熱賣!
 詢價(jià)
更多STP8NM60FP供應(yīng)商 更新時(shí)間2025-1-11 16:03:00

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