首頁>STP9NB50>規(guī)格書詳情

STP9NB50中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

STP9NB50
廠商型號

STP9NB50

功能描述

N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET

文件大小

108.41 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-24 22:50:00

STP9NB50規(guī)格書詳情

DESCRIPTION

Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 0.75 ?

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

產(chǎn)品屬性

  • 型號:

    STP9NB50

  • 功能描述:

    MOSFET RO 512-FQP9N50

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
STM
23+
NA
20000
全新原裝假一賠十
詢價
ST
2020+
TO-220
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
VBsemi
22+23+
TO220F
8000
新到現(xiàn)貨,只做原裝進(jìn)口
詢價
ST/意法
23+
NA/
56
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
ST
20+
TO-220
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
ST
21+
TO220
1523
公司現(xiàn)貨,不止網(wǎng)上數(shù)量!原裝正品,假一賠十!
詢價
ST
0748+
TO220
18
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
ST
23+
TO-220
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
詢價
ST/意法
22+
TO-220F
20000
原裝現(xiàn)貨,實單支持
詢價
ST
23+
TO-220F
10000
專做原裝正品,假一罰百!
詢價