STPSC20065W分立半導(dǎo)體產(chǎn)品的二極管-整流器-單規(guī)格書PDF中文資料

STPSC20065W屬于分立半導(dǎo)體產(chǎn)品的二極管-整流器-單。由意法半導(dǎo)體集團制造生產(chǎn)的STPSC20065W二極管 - 整流器 - 單單整流器二極管系列產(chǎn)品可用于讓電流僅沿一個方向流動，并且每個器件封裝都恰好實現(xiàn)該功能的一個實例。其他用途的二極管（包括齊納二極管和可變電容二極管）單獨列在各自的產(chǎn)品系列中，每個器件封裝中包含多個二極管的產(chǎn)品也是如此。

Features

? No reverse recovery charge in application current range

? Switching behavior independent of temperature

? Dedicated to PFC applications

? Insulated package TO-220AC ins:

? Insulated voltage: 2500 V rms

? Typical package capacitance: 7 pF

? High forward surge capability

? ECOPACK?2 compliant component

? Maximum operating: Tj 175 °C

Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.