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STRH12P10中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

STRH12P10
廠商型號(hào)

STRH12P10

功能描述

Rad-Hard 100 V, 12 A, P-channel Power MOSFET

文件大小

421.82 Kbytes

頁(yè)面數(shù)量

15 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-3 16:00:00

STRH12P10規(guī)格書(shū)詳情

Features

? Fast switching

? 100 avalanche tested

? Hermetic package

? 100 krad TID

? SEE radiation hardened

Description

The STRH12P10 is a P-channel Power MOSFET able to operate under severe

environment conditions and radiation exposure.

It provides high reliability performance and immunity to the total ionizing dose (TID)

and single event effects (SEE).

Qualified as per ESCC detail specification No. 5205/029 and available in TO-257AA

hermetic package, it is specifically recommended for space and harsh environment

applications and suitable for in-Satellite power conversion, motor control and power

switch circuits.

In case of discrepancies between this datasheet and the relevant agency

specification, the latter takes precedence.

產(chǎn)品屬性

  • 型號(hào):

    STRH12P10

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    P-channel 100V - 0.265ヘ - TO-257AA Rad-hard low gate charge STripFET⑩ Power MOSFET

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