首頁 >STTH16R04CGTR>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
Ultrafastrecoverydiode | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Ultrafastrecoverydiode | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
UltrafastRectifier | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Ultrafastrecoverydiode | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
UltrafastRectifier | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Ultrafastrecoverydiode | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
PowerMOSFET FEATURES ?UltraLowGateCharge ?ReducedGateDriveRequirement ?Enhanced30V,VGSRating ?ReducedCiss,Coss,Crss ?ExtremelyHighFrequencyOperation ?RepetitiveAvalancheRated ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel600V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel600V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
PowerMOSFET FEATURES ?UltraLowGateCharge ?ReducedGateDriveRequirement ?Enhanced30V,VGSRating ?ReducedCiss,Coss,Crss ?ExtremelyHighFrequencyOperation ?RepetitiveAvalancheRated ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
PowerMOSFET FEATURES ?UltraLowGateCharge ?ReducedGateDriveRequirement ?Enhanced30V,VGSRating ?ReducedCiss,Coss,Crss ?ExtremelyHighFrequencyOperation ?RepetitiveAvalancheRated ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel600V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel600V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
PowerMOSFET FEATURES ?UltraLowGateCharge ?ReducedGateDriveRequirement ?Enhanced30V,VGSRating ?ReducedCiss,Coss,Crss ?ExtremelyHighFrequencyOperation ?RepetitiveAvalancheRated ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST |
22+ |
D2PAK |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
STMicro. |
23+ |
D2PAK |
7750 |
全新原裝優(yōu)勢 |
詢價(jià) | ||
ST |
24+ |
原廠原封 |
6523 |
進(jìn)口原裝公司百分百現(xiàn)貨可出樣品 |
詢價(jià) | ||
ST/進(jìn)口原 |
17+ |
TO-263 |
6200 |
詢價(jià) | |||
ST |
24+ |
TO-263 |
7500 |
詢價(jià) | |||
ST |
1650+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
ST |
22+23+ |
TO263 |
73791 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ST |
20+ |
TO-263 |
38560 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價(jià) | ||
ST/意法 |
23+ |
TO-263 |
30000 |
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢 |
詢價(jià) | ||
ST |
2021+ |
TO-263 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) |
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