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STTH512B

Ultrafast recovery - 1200 V diode

Description Thehighqualitydesignofthisdiodehasproducedadevicewithlowleakagecurrent,regularlyreproduciblecharacteristicsandintrinsicruggedness.Thesecharacteristicsmakeitidealforheavydutyapplicationsthatdemandlongtermreliability. Suchdemandingapplicationsin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STTH512B

5.0 Ampere Surface Mount Single Positive Type Ultra Fast Recovery Rectifier Diode

Features ※ThinkiSemilatest&maturedprocessFRD/FRED ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPower

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

STTH512B

Ultrafast Rectifier

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STTH512B

包裝：散裝 封裝/外殼：TO-252-3，DPak（2 引線 + 接片），SC-63 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE GEN PURP 1.2KV 5A DPAK

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STTH512B-TR

Ultrafast recovery - 1200 V diode

Description Thehighqualitydesignofthisdiodehasproducedadevicewithlowleakagecurrent,regularlyreproduciblecharacteristicsandintrinsicruggedness.Thesecharacteristicsmakeitidealforheavydutyapplicationsthatdemandlongtermreliability. Suchdemandingapplicationsin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STTH512B-TR

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-252-3，DPak（2 引線 + 接片），SC-63 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE GEN PURP 1.2KV 5A DPAK

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STTH512D

Ultrafastrecovery-1200Vdiode

Description Thehighqualitydesignofthisdiodehasproducedadevicewithlowleakagecurrent,regularlyreproduciblecharacteristicsandintrinsicruggedness.Thesecharacteristicsmakeitidealforheavydutyapplicationsthatdemandlongtermreliability. Suchdemandingapplicationsin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STTH512FP

Ultrafastrecovery-1200Vdiode

Description Thehighqualitydesignofthisdiodehasproducedadevicewithlowleakagecurrent,regularlyreproduciblecharacteristicsandintrinsicruggedness.Thesecharacteristicsmakeitidealforheavydutyapplicationsthatdemandlongtermreliability. Suchdemandingapplicationsin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STTH512P

UltrafastRectifier

FEATURES ·1200Vblockingvoltage ·Ultrafast,softrecovery ·Verylowconductionandswitchinglosses ·Highfrequencyand/orhighpulsedcurrentoperation ·Highjunctiontemperature ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Thispow

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STUB512

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUB512

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:400Watts FEATURES: *400Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V

EIC

EIC discrete Semiconductors

STUK512

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUK512

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUN512

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUP512

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:400Watts FEATURES: *400Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree

EIC

EIC discrete Semiconductors

STUP512

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUS512

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUS512

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

*500Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V

EIC

EIC discrete Semiconductors

SUR512EF

NPN/PNPEpitaxialPlanarSiliconTransistor

Description ?Digitaltransistor Features ?BothSRC1203chipandSRA2203.chip inSOT-563Fpackage ?Withbuilt-inbiasresistors

AUK

AUK corp

SUR512EF

EpitaxialplanarNPN/PNPsilicontransistor

Description ?Dualchipdigitaltransistor Features ?BothSRC1203chipandSRA2203chipinSOT-563Fpackage ?Simplifycircuitdesign ?Reduceaquantityofpartsandmanufacturingprocess

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    STTH512B

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

  • 包裝：

    散裝

  • 二極管類型：

    標(biāo)準(zhǔn)

  • 電流 - 平均整流 (Io)：

    5A

  • 速度：

    快速恢復(fù) =< 500ns，> 200mA（Io）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    TO-252-3，DPak（2 引線 + 接片），SC-63

  • 供應(yīng)商器件封裝：

    DPAK

  • 工作溫度 - 結(jié)：

    175°C（最大）

  • 描述：

    DIODE GEN PURP 1.2KV 5A DPAK

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
原裝
24+
標(biāo)準(zhǔn)
50388
熱賣原裝進(jìn)口
 詢價(jià)
ST(意法)
21+
5000
只做原裝 假一罰百 可開票 可售樣
 詢價(jià)
ST
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
ST
24+
TO252DPAK
8866
詢價(jià)
ST
1816+
TO-252
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價(jià)
INFINOEN
23+
IPAK(TO-
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
ST/意法
21+
TO-252(DPAK)
30000
只做正品原裝現(xiàn)貨
 詢價(jià)
ST
21+
TO252
880
原裝現(xiàn)貨假一賠十
 詢價(jià)
NA
23+
NA
26094
10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè)
 詢價(jià)
ST/意法
23+
TO252DPAK
10000
公司只做原裝正品
 詢價(jià)
更多STTH512B供應(yīng)商 更新時(shí)間2025-1-4 14:14:00

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