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CEZ8R04

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 40V,49A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Pb-freeleadplating;RoHScompliant. HalogenFree. RDS(ON)=12mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC8R04

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 40V,47A,RDS(ON)=7.4mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=12mW@VGS=4.5V. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

STTH8R04

Ultrafastrecoverydiode

Description TheSTTH8R04seriesusesSTsnew400VplanarPtdopingtechnology.TheSTTH8R04isspeciallysuitedforswitchingmodebasedriveandtransistorcircuits. Packagedinthrough-the-holeandsurfacemountpackages,thisdeviceisintendedforuseinlowvoltage,highfrequencyinverter

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STTH8R04D

Ultrafastrecoverydiode

Description TheSTTH8R04seriesusesSTsnew400VplanarPtdopingtechnology.TheSTTH8R04isspeciallysuitedforswitchingmodebasedriveandtransistorcircuits. Packagedinthrough-the-holeandsurfacemountpackages,thisdeviceisintendedforuseinlowvoltage,highfrequencyinverter

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STTH8R04DI

Ultrafastrecoverydiode

Description TheSTTH8R04seriesusesSTsnew400VplanarPtdopingtechnology.TheSTTH8R04isspeciallysuitedforswitchingmodebasedriveandtransistorcircuits. Packagedinthrough-the-holeandsurfacemountpackages,thisdeviceisintendedforuseinlowvoltage,highfrequencyinverter

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STTH8R04FP

Ultrafastrecoverydiode

Description TheSTTH8R04seriesusesSTsnew400VplanarPtdopingtechnology.TheSTTH8R04isspeciallysuitedforswitchingmodebasedriveandtransistorcircuits. Packagedinthrough-the-holeandsurfacemountpackages,thisdeviceisintendedforuseinlowvoltage,highfrequencyinverter

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STTH8R04G

UltrafastRecoveryDiode

FEATURES ·Highthermalcyclingperformance ·Lowon-statelosses ·Lowthermalresistance ·Softrecoverycharacteristic APPLICATIONS ·Verylowswitchinglosses ·Highfrequencyandhighpulsedcurrentoperation ·Highjunctiontemperature

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STTH8R04G

Ultrafastrecoverydiode

Description TheSTTH8R04seriesusesSTsnew400VplanarPtdopingtechnology.TheSTTH8R04isspeciallysuitedforswitchingmodebasedriveandtransistorcircuits. Packagedinthrough-the-holeandsurfacemountpackages,thisdeviceisintendedforuseinlowvoltage,highfrequencyinverter

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STTH8R04G-TR

Ultrafastrecoverydiode

Description TheSTTH8R04seriesusesSTsnew400VplanarPtdopingtechnology.TheSTTH8R04isspeciallysuitedforswitchingmodebasedriveandtransistorcircuits. Packagedinthrough-the-holeandsurfacemountpackages,thisdeviceisintendedforuseinlowvoltage,highfrequencyinverter

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

TN8R04

SwitchingRegulatorICforRCCMethodPowerSuppliesApplications

Features ?OriginalcontrolICforDelayRCC-type. ?HighvoltagepowerMOSFETwithcurrentsense. ?Overloadprotection. ?Onlyfewexternalcomponentsrequired. ?SmallFull-Isolationpackage:TO-220FI5H.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
22+
NA
66900
原廠原裝現(xiàn)貨
 詢價(jià)
ST
23+
原廠原封
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
ST
24+
NA
200000
原裝進(jìn)口正口,支持樣品
 詢價(jià)
ST
21+
原廠原封
23480
詢價(jià)
ST
17+
TO-263
6200
詢價(jià)
STMicro.
23+
D2PAK
7750
全新原裝優(yōu)勢(shì)
 詢價(jià)
ST
24+
TO-263
7500
詢價(jià)
ST
1651+
?
7500
只做原裝進(jìn)口,假一罰十
 詢價(jià)
ST/意法
23+
TO-263
30000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
 詢價(jià)
ST
2447
TO-263-2
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
更多STTH8R04GROHS供應(yīng)商 更新時(shí)間2025-3-10 8:41:00

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