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AOB10B60D

600V,10AAlphaIGBTwithDiode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AOK10B60D

600V,10AAlphaIGBTwithDiode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AOT10B60D

600V,10AAlphaIGBTwithDiode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AOTF10B60D

AOTF10B60D

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

FCF10B60

FRED

NIEC

Nihon Inter Electronics Corporation

FCU10B60

FRD-ForPowerFactorImprovementHighFrequencyRecification

FEATURES *FullyMoldedIsolation *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability

NIEC

Nihon Inter Electronics Corporation

FSF10B60

FRED

NIEC

Nihon Inter Electronics Corporation

FSF10B60B

FRED

NIEC

Nihon Inter Electronics Corporation

FSU10B60

FORPOWERFACTORIMPROVEMENTHIGHFREQUENCYRECTIFICATION

FEATURES *FullyMoldedIsolationCase *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability

NIEC

Nihon Inter Electronics Corporation

GB10B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien

IRF

International Rectifier

IKCM10B60GA

ControlIntegratedPOwerSystem

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKCM10B60GA

ControlIntegratedPOwerSystem

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKCM10B60HA

ControlIntegratedPOwerSystem

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRGB10B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien

IRF

International Rectifier

IRGB10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGS10B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien

IRF

International Rectifier

IRGS10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGS10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRGSL10B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien

IRF

International Rectifier

IRGSL10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

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35200
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9852
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ST
23+
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16900
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30000
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更多STU10B60供應(yīng)商 更新時(shí)間2024-11-15 16:36:00