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STU4A60S

Sensitive Gate Triac

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司

TD4A60S

SensitiveGateTriac

APOLLOELECTRON

Apollo Electron Co., Ltd.

TF4A60

StandardTriac

APOLLOELECTRON

Apollo Electron Co., Ltd.

TK4A60D

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK4A60D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.7Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

TK4A60D

SwitchingRegulatorApplications

SwitchingRegulatorApplications ?Lowdrain-sourceON-resistance:RDS(ON)=1.4Ω(typ.) ?Highforwardtransferadmittance:?Yfs?=2.5S(typ.) ?Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) ?Enhancementmode:Vth=2.4to4.4V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK4A60DA

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType

SwitchingRegulatorApplications ?Lowdrain-sourceONresistance:RDS(ON)=1.7?(typ.) ?Highforwardtransferadmittance:?Yfs?=2.2S(typ.) ?Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) ?Enhancement-mode:Vth=2.4to4.4V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK4A60DA

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

TK4A60DA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK4A60DB

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.7A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    STU4A60S

  • 制造商:

    WINSEMI

  • 制造商全稱:

    WINSEMI

  • 功能描述:

    Sensitive Gate Triac

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STMicroelectronics
24+
NA
3000
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22+23+
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19298
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STM原廠目錄
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28500
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TO-220
100
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STM
1809+
TO-251
3675
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STMicroelectronics
2021++
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5850
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S
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10000
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22+
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2569
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ST/意法半導(dǎo)體
2021+
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7600
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更多STU4A60S供應(yīng)商 更新時(shí)間2025-2-23 14:15:00