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STW10NB60

N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STW10NB60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

GB10NB60S

N-CHANNEL10A-600V-TO-220/TO-220FP/D2PAKPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

GF10NB60SD

N-channel10A-600V-TO-220FPPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

GP10NB60S

N-CHANNEL10A-600V-TO-220/TO-220FP/D2PAKPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

GP10NB60SD

N-CHANNEL10A-600V-TO-220LowDropPowerMESHTMIGBT

Description Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.ThesuffixSidentifiesafamilyoptimizedachieveminimumon-voltagedropforlowfrequencya

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

GP10NB60SFP

N-CHANNEL10A-600V-TO-220/TO-220FP/D2PAKPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGB10NB60S

N-CHANNEL10A-600V-TO-220/TO-220FP/D2PAKPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGF10NB60SD

N-channel10A-600V-TO-220FPPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGF10NB60SD

N-CHANNEL10A-600VTO-220FPPowerMESHIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGP10NB60S

N-CHANNEL10A-600V-TO-220/TO-220FP/D2PAKPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGP10NB60S

N-CHANNEL10A-600VTO-220PowerMESHIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“S”identifiesafamilyoptimizedachieveminimumon-voltagedropforlowfrequenc

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGP10NB60SD

N-CHANNEL10A-600V-TO-220LowDropPowerMESHTMIGBT

Description Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.ThesuffixSidentifiesafamilyoptimizedachieveminimumon-voltagedropforlowfrequencya

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGP10NB60SDFP

N-CHANNEL10A-600V-TO-220FPPowerMesh??IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“S”identifiesafamilyoptimizedachieveminimumon-voltagedropforlowfrequency

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGP10NB60SFP

N-CHANNEL10A-600V-TO-220FPPowerMesh??IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“S”identifiesafamilyoptimizedachieveminimumon-voltagedropforlowfrequenc

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGP10NB60SFP

N-CHANNEL10A-600V-TO-220/TO-220FP/D2PAKPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP10NB60SFP

N-CHANNEL10A-600V-TO-220FPPowerMesh??IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“S”identifiesafamilyoptimizedachieveminimumon-voltagedropforlowfrequencya

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

TSM10NB60

Highpowerandcurrenthandlingcapability

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號:

    STW10NB60

  • 功能描述:

    MOSFET N-CH 600V 10A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
11+
28500
詢價
ST
06+
TO-247
2380
原裝
詢價
24+
N/A
3000
詢價
ST
15+
TO-247
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
詢價
ST
16+
TO-3P
10000
全新原裝現(xiàn)貨
詢價
ST
2020+
TO-3P
350000
100%進口原裝正品公司現(xiàn)貨庫存
詢價
ST
24+
TO-247
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
詢價
ST
24+
TO-247
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
ST
24+
TO-3P
6430
原裝現(xiàn)貨/歡迎來電咨詢
詢價
ST/意法
23+
TO-247
10000
公司只做原裝正品
詢價
更多STW10NB60供應(yīng)商 更新時間2025-1-12 9:00:00