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IRFP26N60L

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.25?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP26N60L

PowerMOSFET

FEATURES ?Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications ?Lowergatechargeresultsinsimplerdrive requirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?Highergatevoltagethresholdoffersimprovednoise immunity ?Materialcategoriza

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP26N60L

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP26N60L

SMPSMOSFET

FeaturesandBenefits ?Superfastbodydiodeeliminatestheneedforexternal diodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity Applica

IRF

International Rectifier

IRFP26N60L

PowerMOSFET

PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP26N60LPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP26N60LPBF

HEXFETPowerMOSFET(VDSS=600V,RDS(on)typ.=210m廓,Trrtyp.=170ns,ID=26A)

FeaturesandBenefits ?Superfastbodydiodeeliminatestheneedforexternal diodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity ?Lead-

IRF

International Rectifier

IRFP26N60LPBF

PowerMOSFET

PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IXFH26N60

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?

IXYS

IXYS Corporation

IXFH26N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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16900
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ST
21+
TO-3P
23480
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ST
22+
TO-3P
16900
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2447
SMD
100500
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1773
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20094
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1383
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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10000
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24+
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8866
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更多STW26N60N供應(yīng)商 更新時(shí)間2025-3-10 16:00:00

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