首頁(yè) >STW3N150/SADA>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
Powerswitchcircuitofadaptorandcharger. | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
N-channelEnhancedVDMOSFETs | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
iscN-ChannelMOSFETTransistor ·FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS:1500V(Min) ·StaticDrain-SourceOn-ResistanceRDS(on): | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementMode | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode | IXYS IXYS Corporation | IXYS | ||
N-ChannelMOSFET DESCRIPTION ·DrainCurrent-ID=178A@TC=25℃ ·DrainSourceVoltage -VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V ·AvalancheRated ·FastIntrinsicDiode APPLICATIONS ·EasytoMount ·SpaceSavings ·HighPowerDensity | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司 | NCEPOWER | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司 | NCEPOWER | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司 | NCEPOWER | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司 | NCEPOWER | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司 | NCEPOWER | ||
N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=2.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpower | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel1500V,2.5A,6Ωtyp.,PowerMESHPowerMOSFETsinTO-3PF,H2PAK-2,TO-220andTO247packages Features ?100avalanchetested ?IntrinsiccapacitancesandQgminimized ?Highspeedswitching ?FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications ?Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFETinTO-220,TO-247,TO-3PF | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST |
原廠原封 |
93480 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
ST/意法 |
22+ |
TO-247 |
89121 |
詢價(jià) | |||
ST/意法 |
22+ |
TO-247 |
20000 |
深圳原裝現(xiàn)貨正品有單價(jià)格可談 |
詢價(jià) | ||
ST/意法 |
23+ |
TO-247 |
8215 |
原廠原裝 |
詢價(jià) | ||
ST/意法 |
2022+ |
TO-247 |
8000 |
只做原裝支持實(shí)單,有單必成。 |
詢價(jià) | ||
ST/意法 |
23+ |
TO-247 |
85800 |
原盒原標(biāo),正品現(xiàn)貨 誠(chéng)信經(jīng)營(yíng) 假一罰十 |
詢價(jià) | ||
ST/意法 |
23+ |
N/A |
14280 |
強(qiáng)勢(shì)渠道訂貨 7-10天 |
詢價(jià) | ||
ST/意法 |
22 |
TO-247 |
15000 |
3月31原裝,微信報(bào)價(jià) |
詢價(jià) | ||
ST/意法 |
22+ |
TO-247 |
34137 |
只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ST/意法 |
2023+ |
TO-247 |
50000 |
AI智能識(shí)別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站 |
詢價(jià) |
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