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3N150S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

HM3N150A

Powerswitchcircuitofadaptorandcharger.

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM3N150F

N-channelEnhancedVDMOSFETs

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

ISH3N150

iscN-ChannelMOSFETTransistor

·FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS:1500V(Min) ·StaticDrain-SourceOn-ResistanceRDS(on):

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTA3N150HV

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTH3N150

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTH3N150

N-ChannelEnhancementMode

IXYS

IXYS Corporation

IXTJ3N150

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTQ3N150M

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTQ3N150M

N-ChannelMOSFET

DESCRIPTION ·DrainCurrent-ID=178A@TC=25℃ ·DrainSourceVoltage -VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V ·AvalancheRated ·FastIntrinsicDiode APPLICATIONS ·EasytoMount ·SpaceSavings ·HighPowerDensity

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NCE3N150

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE3N150D

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE3N150F

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE3N150PF

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE3N150T

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

STFV3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFW3N150

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=2.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpower

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STFW3N150

N-channel1500V,2.5A,6Ωtyp.,PowerMESHPowerMOSFETsinTO-3PF,H2PAK-2,TO-220andTO247packages

Features ?100avalanchetested ?IntrinsiccapacitancesandQgminimized ?Highspeedswitching ?FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications ?Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFW3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFETinTO-220,TO-247,TO-3PF

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFW3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
原廠原封
93480
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價(jià)
ST/意法
22+
TO-247
89121
詢價(jià)
ST/意法
22+
TO-247
20000
深圳原裝現(xiàn)貨正品有單價(jià)格可談
詢價(jià)
ST/意法
23+
TO-247
8215
原廠原裝
詢價(jià)
ST/意法
2022+
TO-247
8000
只做原裝支持實(shí)單,有單必成。
詢價(jià)
ST/意法
23+
TO-247
85800
原盒原標(biāo),正品現(xiàn)貨 誠(chéng)信經(jīng)營(yíng) 假一罰十
詢價(jià)
ST/意法
23+
N/A
14280
強(qiáng)勢(shì)渠道訂貨 7-10天
詢價(jià)
ST/意法
22
TO-247
15000
3月31原裝,微信報(bào)價(jià)
詢價(jià)
ST/意法
22+
TO-247
34137
只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
ST/意法
2023+
TO-247
50000
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更多STW3N150/SADA供應(yīng)商 更新時(shí)間2025-1-13 11:35:00