国产精品看高国产精品不卡,伊人久久精品无码AV一区二区三区 ,嫩草伊人久久精品少妇

首頁 >STW42N65M5,W42N65M5>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
STB42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STB42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STB42N65M5	文件：313.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STB42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STB42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STF42N65M5	文件：310.7 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ?DrainCurrent–ID=33A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingappl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STF42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STF42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STF42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STI42N65M5	文件：357.93 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ?DrainCurrent–ID=33A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingappl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STI42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STI42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STI42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STL42N65M5	文件：686.55 Kbytes Page：14 Pages	N-channel650V,0.070廓,34AMDmesh??VPowerMOSFETinPowerFLAT??8x8HVpackage Description ThisdeviceisanN-channelMDmesh?VPower MOSFETbasedonaninnovativeproprietary verticalprocesstechnology,whichiscombined withSTMicroelectronics’well-known PowerMESH?horizontallayoutstructure.The resultingproducthasextremelylowonresistance,whichisunmatche	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP42N65M5	文件：1.10111 Mbytes Page：18 Pages	N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP42N65M5	文件：1.10123 Mbytes Page：18 Pages	N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247 Description MDmesh?VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP42N65M5	文件：319.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STW42N65M5	文件：436.01 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STW42N65M5	文件：1.10667 Mbytes Page：18 Pages	N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS

12 >>>

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
中科航電（深圳）電子集團(tuán)有限公司	STW42N65M5,W42N65M5	ST		原廠原封	93480	集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)	詢價(jià)
深圳市納艾斯科技有限公司	STW42N65M542N65M5	ST	2020+	TO-247	80000	只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)
深圳和潤天下電子科技有限公司	STW42N65M542N65M5	ST/意法	22+	TO-247	88168		詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	STW42N65M5IC	ST/意法	23+	TO-247	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳廊盛科技有限公司	STW42N65M5IC	ST/意法	2022	TO-247	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價(jià)
深圳市湘達(dá)電子科技有限公司	STW42N65M5MOS(場效應(yīng)管)	ST/意法	2022+	TO-247	8000	只做原裝支持實(shí)單,有單必成。	詢價(jià)
深圳龐田科技有限公司	STW42N65M5MOS(場效應(yīng)管)	ST/意法	2023+	TO-247	50000	AI智能識(shí)別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站	詢價(jià)
深圳市星佑電子有限公司	STW42N65M5W42N65M5	ST	22+	原廠原封	16900	支持樣品原裝現(xiàn)貨提供技術(shù)支持!	詢價(jià)
深圳市英瑞芯科技有限公司	STW42NM65ND	ST/意法	22+	TO-3P	8900	英瑞芯只做原裝正品!!!	詢價(jià)
深圳市達(dá)恩科技有限公司	STW43N60DM2	STMicroelectronics	18+	NA	3000	進(jìn)口原裝正品優(yōu)勢供應(yīng)	詢價(jià)

更多STW42N65M5,W42N65M5供應(yīng)商更新時(shí)間2025-1-9 16:09:00

相關(guān)規(guī)格書

相關(guān)庫存