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STW50N10

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.027? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURREN

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STW50N10

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.035Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BR50N10

N-CHANNELMOSFETinaTO-220PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

CEB50N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,50A,RDS(ON)=30mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB50N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,50A,RDS(ON)=30mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP50N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,50A,RDS(ON)=30mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP50N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,50A,RDS(ON)=30mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

EMB50N10A

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB50N10G

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS100V RDSON(MAX.)50mΩ ID7A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB50N10S

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS100V RDSON(MAX.)50mΩ ID8A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

詳細參數(shù)

  • 型號:

    STW50N10

  • 功能描述:

    MOSFET REORD 511-STW55NE10

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
ST
06+
TO-247
2380
原裝庫存
詢價
ST
24+
TO-3P
1000
原裝現(xiàn)貨熱賣
詢價
24+
N/A
2595
詢價
ST
17+
TO-3P
6200
詢價
ST
16+
TO-3P
10000
全新原裝現(xiàn)貨
詢價
ST
23+
TO-247
8795
詢價
ST
2020+
TO-3P
350000
100%進口原裝正品公司現(xiàn)貨庫存
詢價
ST
24+
TO-247
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
詢價
ST
23+
TO-3P
15000
專做原裝正品,假一罰百!
詢價
ST
2023+
TO-247
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
更多STW50N10供應商 更新時間2025-1-24 10:32:00