STWA67N60DM6中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

廠商型號	STWA67N60DM6
功能描述	N-channel 600 V, 45 m typ., 58 A MDmesh DM6 Power MOSFET in a TO?247 long leads package
文件大小	274.48 Kbytes
頁面數(shù)量	12 頁
生產(chǎn)廠商	STMicroelectronics
企業(yè)簡稱	STMICROELECTRONICS【意法半導體】
中文名稱	意法半導體集團官網(wǎng)
原廠標識
數(shù)據(jù)手冊	下載地址一下載地址二到原廠下載
更新時間	2025-2-8 23:00:00

Features

? Fast-recovery body diode

? Lower RDS(on) per area vs previous generation

? Low gate charge, input capacitance and resistance

? 100 avalanche tested

? Extremely high dv/dt ruggedness

? Zener-protected

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery

diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent

improvement in RDS(on) per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Applications

? Switching applications