SVD9Z24NT中文資料士蘭微數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

SVD9Z24NT is a P-channel enhancement mode power MOS field effect

transistor which is produced using Silan planar VDMOS process. The

improved process and cell structure have been especially tailored to

minimize on-state resistance, provide superior switching performance,

and withstand high energy pulse in the avalanche and commutation

mode. This device is widely used in push-pull amplifier, high-side

switching circuit, CMOS power amplifier.

FEATURES

? -12A, -55V ,RDS(on)(typ.)<175m?@VGS=-10V

? P channel

? Low gate charge

? Low Crss

? Fast switching

? Improved dv/dt capability