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SVF7N65RDTR

Marking:7N65RD;Package:TO-252-2L;7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RDTR

Marking:7N65RD;Package:TO-252-2L;7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RDTR

Marking:7N65RD;Package:TO-252-2L;7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RDTR

Marking:7N65RD;Package:TO-252-2L;7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RDTR

Marking:7N65RD;Package:TO-252-2L;7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RDTR

Marking:7N65RD;Package:TO-252-2L;7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RDTR

Marking:7N65RD;Package:TO-252-2L;7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RDTR

Marking:7N65RD;Package:TO-252-2L;7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RF

7A,650VN-CHANNELMOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RF

7A,650VN-CHANNELMOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RF

7A,650VN-CHANNELMOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RF

7A,650VN-CHANNELMOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RF

7A,650VN-CHANNELMOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RF

7A,650VN-CHANNELMOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RF

7A,650VN-CHANNELMOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RF

7A,650VN-CHANNELMOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RFJH

7A,650VN-CHANNELMOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RFJH

7A,650VN-CHANNELMOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RFJH

7A,650VN-CHANNELMOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RFJH

7A,650VN-CHANNELMOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
SILAN/士蘭微
24+
TO-252
196000
專營SILAN士蘭微原裝保障
詢價
SILAN/士蘭微
21+
SOP
160
詢價
SILAN/士蘭微
22+
TO-252
8900
英瑞芯只做原裝正品!!!
詢價
SILAN/士蘭微
2052+
SOP
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
SILAN/士蘭微
23+
TO-252
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價
Silan/士蘭微
21+
TO-252
25000
保證原裝正品,需要直接聯(lián)系張小姐,13544103396
詢價
SILAN/士蘭微
22+
TO-252
100000
代理渠道/只做原裝/可含稅
詢價
SILAN
2204+
TO-252
12260
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
SILAN
24+
TO-252
12260
詢價
SILAN/士蘭微
SOP
90000
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
更多SVF7N65RDTR供應(yīng)商 更新時間2025-1-18 18:17:00