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SVSP11N65FJDD2中文資料士蘭微數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
SVSP11N65FJDD2 |
| 功能描述 | 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR |
| 絲印標(biāo)識 | |
| 封裝外殼 | TO-220FJD-3L |
| 文件大小 |
413.58 Kbytes |
| 頁面數(shù)量 |
10 頁 |
| 生產(chǎn)廠商 | Silan Microelectronics Joint-stock |
| 企業(yè)簡稱 |
SILAN【士蘭微】 |
| 中文名稱 | 杭州士蘭微電子股份有限公司官網(wǎng) |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-1-30 13:48:00 |
SVSP11N65FJDD2規(guī)格書詳情
DESCRIPTION
SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode
high voltage power MOSFETs produced using Silan’s super junction
MOS technology. It achieves low conduction loss and switching
losses. It leads the design engineers to their power converters with
high efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
FEATURES
? 11A,650V, RDS(on)(typ.)=0.33?@VGS=10V
? New revolutionary high voltage technology
? Ultra low gate charge
? Periodic avalanche rated
? Extreme dv/dt rated
? High peak current capability
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SILAN/士蘭微 |
TO220 |
90000 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
SAMSUNG |
24+ |
QFP |
71 |
詢價 | |||
BGA |
40 |
詢價 | |||||
SILAN/士蘭微 |
24+ |
TO220F |
15000 |
只做全新原裝正品現(xiàn)貨 假一罰十 |
詢價 | ||
Silan |
23+ |
TO-247 |
2795 |
現(xiàn)貨庫存,實單請給接受價格 |
詢價 | ||
SILAN |
22+ |
PDFN8 |
621 |
全新原裝只做自己庫存只做原裝 |
詢價 | ||
24+ |
N/A |
58000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
SILAN(士蘭微) |
23+ |
TO-220FJD-3L |
431 |
三極管/MOS管/晶體管 > 場效應(yīng)管(MOSFET) |
詢價 | ||
冠坤電子 |
21+ |
10mm*12.5mm |
13 |
全新原裝鄙視假貨15118075546 |
詢價 | ||
3M |
2022+ |
13 |
全新原裝 貨期兩周 |
詢價 |
