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首頁 >SVT035R5NSATR>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
SVT035R5NSATR	文件：249.53 Kbytes Page：7 Pages	21A, 30V N-CHANNEL MOSFET DESCRIPTION SVT035R5NSAisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Thisdev	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
035R5ND	文件：369.3 Kbytes Page：9 Pages	100A,30VN-CHANNELMOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
035R5NMJ	文件：369.3 Kbytes Page：9 Pages	100A,30VN-CHANNELMOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
035R5NT	文件：369.3 Kbytes Page：9 Pages	100A,30VN-CHANNELMOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVT035R5ND	文件：369.32 Kbytes Page：9 Pages	100A,30VN-CHANNELMOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVT035R5NDTR	文件：369.32 Kbytes Page：9 Pages	100A,30VN-CHANNELMOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVT035R5NDTR	文件：369.3 Kbytes Page：9 Pages	100A,30VN-CHANNELMOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVT035R5NDTR	文件：369.3 Kbytes Page：9 Pages	100A,30VN-CHANNELMOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVT035R5NDTR	文件：369.3 Kbytes Page：9 Pages	100A,30VN-CHANNELMOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVT035R5NMJ	文件：369.3 Kbytes Page：9 Pages	100A,30VN-CHANNELMOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVT035R5NMJ	文件：369.3 Kbytes Page：9 Pages	100A,30VN-CHANNELMOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVT035R5NMJ	文件：369.3 Kbytes Page：9 Pages	100A,30VN-CHANNELMOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVT035R5NMJ	文件：369.32 Kbytes Page：9 Pages	100A,30VN-CHANNELMOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVT035R5NSA	文件：249.53 Kbytes Page：7 Pages	21A,30VN-CHANNELMOSFET DESCRIPTION SVT035R5NSAisanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Thisdev	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVT035R5NT	文件：369.3 Kbytes Page：9 Pages	100A,30VN-CHANNELMOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVT035R5NT	文件：369.3 Kbytes Page：9 Pages	100A,30VN-CHANNELMOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVT035R5NT	文件：369.3 Kbytes Page：9 Pages	100A,30VN-CHANNELMOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVT035R5NT	文件：369.32 Kbytes Page：9 Pages	100A,30VN-CHANNELMOSFET DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市順鑫晟科技有限公司	SVT035R5NT	SILAN/士蘭微	2024+	TO-220-3L	188600	全新原廠原裝正品現(xiàn)貨歡迎咨詢	詢價
深圳市瑞新盛科技有限公司	SVT035R5NT	SILAN/士蘭微	24+	TO-220	126000	專營SILAN士蘭微原裝保障	詢價
深圳市凌旭科技有限公司	SVT042R5NT	SILAN/士蘭微	21+	TO220	38000		詢價
深圳市科恒偉業(yè)電子有限公司	SVT042R5NT	SILAN/士蘭微	2052+	TO220	9852	只做原裝正品現(xiàn)貨!或訂貨假一賠十!	詢價
中科航電（深圳）電子集團有限公司	SVT042R5NT	SILAN/士蘭微		TO220	90000	集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)	詢價
現(xiàn)代芯城（深圳）科技有限公司	SVT042R5NT		24+	N/A	80000	一級代理-主營優(yōu)勢-實惠價格-不悔選擇	詢價
北京三盛恒業(yè)電子有限公司	SVT044R5NT	SILAN	21+	N/A	2500	進口原裝,優(yōu)勢現(xiàn)貨	詢價
天津市博通航睿技術(shù)有限公司	SVT044R5NT	SILAN			37		詢價
深圳市芯祺盛科技有限公司	SVT044R5NT	SILAN	24+	*	37	C08-場效應(yīng)管	詢價
北京京北通宇電子元件有限公司	SVT044R5NT	SILAN	24+	con	37	現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格https://www.jbchip.com/index	詢價

更多SVT035R5NSATR供應(yīng)商更新時間2024-12-25 11:38:00

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