| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,15A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,14.5A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=10mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,76A,RDS(ON)=6.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,76A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,78A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
VOLTAGEREFERENCEARRAY | DIODES Diodes Incorporated | DIODES |
詳細(xì)參數(shù)
- 型號：
SZ6056
- 制造商：
EIC
- 制造商全稱：
EIC discrete Semiconductors
- 功能描述：
SURFACE MOUNT SILICON ZENER DIODES
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
EIC |
2019+PB |
SMB(DO-214AA) |
45000 |
原裝正品 可含稅交易 |
詢價 | ||
SUNMATE(森美特) |
2019+ROHS |
DO-214AA(SMB) |
66688 |
森美特高品質(zhì)產(chǎn)品原裝正品免費(fèi)送樣 |
詢價 | ||
EIC |
23+ |
NA |
39960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 | ||
EIC |
19+ |
SMB(DO-21 |
200000 |
詢價 | |||
EIC |
20+ |
SMB(DO-214AA) |
36800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
EIC |
24+ |
45000 |
原裝現(xiàn)貨假一賠十 |
詢價 | |||
EIC |
23+ |
SMB |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
EIC |
新年份 |
SMB(DO-214AA) |
45000 |
原裝正品大量現(xiàn)貨,要多可發(fā)貨,實單帶接受價來談! |
詢價 | ||
EIC |
2022+ |
SMB(DO-21 |
20000 |
只做原裝進(jìn)口現(xiàn)貨.假一罰十 |
詢價 | ||
EIC |
24+ |
SMB(DO-214AA) |
18800 |
絕對原裝進(jìn)口現(xiàn)貨 假一賠十 價格優(yōu)勢! |
詢價 |
